World's First Fully Integrated Doherty Amplifiers by NEP

Of recent the semiconductors industry has seen another boost being added to its credential - Fully Integrated Doherty Amplifiers. This products was launched by NXP Semiconductors, the independent semiconductor company founded by Philips more than 50 years ago. With its headquarters in Europe, Next E Experience (NXP) creates semiconductors, system solutions and software that is known to deliver better sensory experiences in TVs, set-top boxes, identification applications, mobile phones, cars and a wide range of other electronic devices.

This time the company has launched its unique amplifier which is claimed to be the world's first amplifier that is fully integrated and can be applied on the similar pattern that is installed by a standard class AB transistor. Christened as NXP BLD6G21-50 and BLD6G22-50 amplifiers, these devices are becoming a hit in the semiconductor markets all over the world. Reduced design size and operational costs commingled with highest power efficiency is the unique selling attribute of this amplifier. They have been designed specially for TD-SCDMA and WCDMA base stations.

Having the advantages like eliminating the need for extra tuning during manufacturing, providing significant cost efficiencies during the development process of cellular base station power amplifiers, these Doherty amplifiers integrate frequencies from 2010 MHz to 2025 MHz and both the main and peak devices are fused with input splitter and output combiner that allows the amplifiers to minimize their required board space. Besides, there are two additional pins that act instrumental in external biasing purposes.

The company claims to have developed this products in order to suffice the demand from the base station providers and telecommunication operators. As per Mark Murphy, the Director of marketing for RF power products, NXP Semiconductors, "Integrated Doherty technology is considered a holy grail in amplifiers,". The director also expedited on the various advantages and challenges that can be overcome by the application of this amplifier.

Having smallest designs loaded with record efficiency, capable of cutting total system power consumption reduce cost while boosting performance are some of the benefits that are luring the consumers to opt for this amplifier present in the semiconductor industry. This innovation offers ease of design while delivering unsurpassed efficiency of 40% at an average power of 10W, thus enabling 5% lower power dissipation under multi-carrier signal operation compared to class AB amplifiers.

Next E Experience also credits itself with line-ups of RF power transistors operating from 800 MHz right up to 3.8 GHz for base stations, covering all cellular technologies. The amplifier that is still in the sampling process is being scheduled to be available in the markets throughout the year.

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